Invited Speakers

Tony Peaker is Emeritus Professor of Electronic Materials in the Photon Science Institute at the University of Manchester. His research speciality is defects in semiconductors. He joined the University in 1975 after spending 8 years as the manager of Ferranti's Photon Devices Group. This group produced the world's first commercial light emitting diodes. He has been involved in the development of LASERs and detectors for fibre optic communications, rare earth emission in phosphors, amplifiers and silicon photonics, solar cells, radiation detectors and many aspects of silicon, germanium and silicon germanium materials. He is co-inventor of Laplace (high resolution) Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy. Recently his work has focussed on quantum dot nanostructures, photovoltaics and the study of defects using optically excited Laplace Deep Level Transient Spectroscopy to study quantum dots and wide band gap semiconductors. He has published over 300 papers on the topics listed above.

Dr. Lasse Vines received his M.Sc. from the Norwegian University of Science and Technology in Trondheim, Norway, in 2001, and worked as a researcher at the Norwegian Defence Research Establishment in Oslo, Norway, from 2001 to 2004. His PhD was completed in 2008 at the University of Oslo, with the thesis title “Fundamental Defect Complexes and Nanostructuring of Silicon by Ion Beams”. He was had several Post Doc positions at the University of Oslo and in 2010 he was awarded a Post Doc fellowship from the Norwegian Reasearch Council. He has had several research visits abroad, the latest visit to ANU, Canberra, Australia. His work has lately focused on photovoltaics, point defects in silicon, and wide band gap semiconductors, with a particular emphasis on ZnO. He has co-supervised 3 M.Sc. students and is presently co-supervising 4 PhD students. Vines has published more than 25 papers in peer reviewed international journals.

Andrej Kuznetsov holds a Ph.D. degree from the Russian Academy of Sciences awarded in 1992 as a result of his thesis work on “Point defect generation and enhanced diffusion in silicon during silicide formation” at the Institute of Microelectronic Technology in Chernogolovka, Russia. After making several postdoc/visiting researcher positions in France and Sweden he proved his docent competence at the Royal Institute of Technology (KTH) in Sweden where he was employed during 1997-2001 as a research associate investigating group-IV semiconductors including SiC, SiGe, and their applications in micro/nanotechnology. In 2001 he moved to the Dept of Physics at the University of Oslo (UiO) in Norway where he was appointed at a rank of an associate professor and, later in 2005, promoted to a rank of a full professor. Since approximately 2003 in addition to maintaining Si-research activities, a systematic effort to investigate ZnO-based semiconductors and ZnO device applications in a segment of renewable and saving energy devices is undertaken. Kuznetsov served/acts as a main supervisor for 7 PhD students at UiO and served/assists as a co-supervisor to a number of theses at KTH, UiO and other institutes. The work has resulted in more than 170 peer-reviewed journal papers, several patents, and recognition by colleagues in the field highlighted by organizing international meetings, research networks, student summer schools as well as holding international appointments in form of reviewing FP6/7 projects, advisory board memberships, and acting as referee for several general physics and specialized journals.

Prof. Hölsä graduated as Dr. Sci. in Technology in 1983 from the Department of Chemical Engineering at the Helsinki University of Technology (TKK, now a part of the Aalto University). Since 1992, he has been the Professor of Inorganic Chemistry at the Department of Chemistry at the University of Turku and currently a Visiting Professor at the Instituto de Química, Universidade de São Paulo, São Paulo – SP, Brazil. Prof. Hölsä has more than 30 years experience in the spectroscopy and luminescence of (nanocrystalline) inorganic phosphor materials based mainly on the rare earths, in addition to different fields of conventional Inorganic Chemistry. The results have been published in more than 200 papers in peer reviewed international journals and in more than 250 presentations in international meetings and conferences. He has co-organized several international conferences and is serving as a frequent referee for several international journals. He is a member of e.g. the steering committee of International Conference on Luminescence (ICL) and the International Centre for Diffraction Data (ICDD). His present fields of interest include the IR-to-vis up-conversion luminescence and persistent luminescence of defects containing materials investigated by using a variety of different techniques in extensive international co-operation. Especially, the focus is on understanding the complex origin of the latter phenomenon. Prof. Hölsä can be contacted most conveniently by email: jholsa@utu.fi

Prof Holtz finished his Ph.D. in 1984 at the Dept. of Physics, Chemistry and Biology (IFM) at Linköping University in Sweden. He has spent 1987-89 as a postdoc with Prof James Merz at the Materials Dept, UCSB, California. His research is focused on optical properties of semiconductors, in the early career on bulk semiconductor structures with emphasis on impurities in these structures. During the postdoc period at UCSB, he initiated optical studies of quantum wells, heterostructures and superlattices. In the late 90’s, after another postdoc period with Prof Pierre Petroff at UCSB, the attention was more focused on quantum structures of even lower dimensionality i.e. quantum wires and quantum dots. The main tools employed for the optical characterization have been photoluminescence (PL), time resolved PL, PL excitation, micro-PL, FTIR and SNOM. Different material systems, such as GaAs/AlGaAs, Si/Ge, InAs/GaAs, have been studied. During recent years, there has been successfully more focus on quantum wires and quantum dots based on wide bandgap materials, e.g. GaN/AlGaN and ZnO. Prof Holtz has authored or co-authored about 430 articles presented in refereed journals and at international conferences. Since 1999 he has held professor position and is Director of the graduate program at IFM department at Linköping University.

Anne Henry received her PhD degree in Physics (Microelectronics) at the University of Grenoble, France in 1986. After a postdoctoral position from 1987-1989, she was employed as research assistant at Linköping University (LiU) in Linköping, Sweden. From 1996 to 2002 she was in the employment of ABB and Okmetic, while at the same time being in part-time employment of the LiU.  During this time she assisted at LiU to support and direct students during their doctoral studies as promoter for 1 PhD and co-promoting for 5 PhD students. She is currently fully employed by LiU as lecturer, where she takes full responsibility for the course Engineering for Biology and Chemistry.  She has been responsible for the characterization of SiC by photoluminescence since the inception of the SiC research activities in 1992 at LiU. Since 1996 she is also responsible for the SiC epitaxial growth by CVD growth using a hot-wall reactor. She is also been involved in nitride epitaxial growth and has started a project on boron-nitride growth and characterization.   Her research contribution is described with an h-index of 27, 1625 citations (without self-citation), 90 journal articles, 190 conference contributions and chapters in 5 books.

Prof Erik Janzén received his PhD in Solid State Physics in 1981 from Lund University, Sweden. He joined the company ABB in Västerås, Sweden in 1983 working with fiber optic sensors and power devices. In 1989 he joined Linköping University but had between 1989 and 2001 also different part time positions at ABB and Okmetic. He is since 1995 professor at Linköping University and since 2009 head of Semiconductor Materials. He has since the start 1991 been the head of the SiC research at LiU, which includes growth, characterization and defect physics. He has led the early developments of the Hot-wall SiC CVD reactor for epitaxial growth and the SiC HTCVD reactor for bulk growth. Since a few years he has transferred the Hot-wall technology also to the MOCVD growth of III-nitrides. He is author/co-author of more than 500 publications, review articles, book chapters and patents.

Prof. Dr. Jörg Weber received his doctorate from University Stuttgart, after which he worked as Postdoctoral research fellow with Prof. G.D. Watkins at the Sherman-Fairchild Laboratory, Lehigh University, USA. For many years he was a Research fellow at the Max-Planck-Institute for Solid State Research, Stuttgart, in the department of Prof. H.J. Queisser, during which time he was also Visiting professor at different Universities and Research Laboratories in Japan, Sweden and USA.  Since 1999 he has been Chair Professor of Semiconductor Physics, TU Dresden, where he has been head of the Physics Department, Dean of the Science Faculty and is currently Vice-Rector for Research. His research interest is in the general area of semiconducting materials and defects in semiconductors. Recent work has focused on (1) hydrogen and its interaction with other impurities and defects in semiconductors, (2) processing-induced defects, (3) wide band gap semiconductors and (4) semiconductor structures for photovoltaics.